CGHV14250F
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Transistor Polarity :N-Channel
Technology :GaN
Product Category :RF JFET Transistors
Mounting Style :Screw
Gain :18.6 dB
Transistor Type :HEMT
Output Power :330 W
Package / Case :440162
Maximum Operating Temperature :+ 130 C
Vds - Drain-Source Breakdown Voltage :150 V
Packaging :Tube
Maximum Drain Gate Voltage :-
Id - Continuous Drain Current :18 A
Vgs - Gate-Source Breakdown Voltage :- 10 V to + 2 V
Pd - Power Dissipation :-
Manufacturer :Wolfspeed / Cree
Description :RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
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The CGHV14250F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
