CGHV60170D
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Transistor Polarity :N-Channel
Technology :GaN
Product Category :RF JFET Transistors
Mounting Style :SMD/SMT
Gain :18 dB
Transistor Type :HEMT
Output Power :170 W
Package / Case :Bare Die
Maximum Operating Temperature :-
Vds - Drain-Source Breakdown Voltage :50 V
Packaging :Gel Pack
Maximum Drain Gate Voltage :-
Id - Continuous Drain Current :12.6 A
Vgs - Gate-Source Breakdown Voltage :-
Pd - Power Dissipation :-
Manufacturer :Wolfspeed / Cree
Description :RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
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The CGHV60170D,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
